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APT34M120J
1200V, 35A, 0.29 Max
N-Channel MOSFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
S G D
S
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
file # E145592
APT34M120J Single die MOSFET
G
D
S
FEATURES
* Fast switching with low EMI/RFI * Low RDS(on) * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* PFC and other boost converter * Buck converter * Two switch forward (asymmetrical bridge) * Single switch forward * Flyback * Inverters
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 35 22 195 30 2700 25
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 Torque 10 Terminals and Mounting Screws. 1.1 MicrosemiWebsite-http://www.microsemi.com 0.11 150 C V oz g in*lbf N*m
04-2009 050-8088 Rev B
Min
Typ
Max 960 0.13
Unit W C/W
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 25A VGS = VDS, ID = 2.5mA VDS = 1200V VGS = 0V TJ = 25C TJ = 125C
APT34M120J
Typ 1.41 0.24 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 1200
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
3
0.29 5 100 500 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 25A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 58 18200 215 1340 520
Max
Unit S
pF
VGS = 0V, VDS = 0V to 800V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 25A, VDS = 600V Resistive Switching VDD = 800V, ID = 25A RG = 2.2 6 , VGG = 15V
265 560 90 265 100 60 315 90
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 35
Unit
G S
A 195 1 1430 46 10 V ns C V/ns
ISD = 25A, TJ = 25C, VGS = 0V ISD = 25A 3 diSD/dt = 100A/s, TJ = 25C ISD 25A, di/dt 1000A/s, VDD = 100V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 8.64mH, RG = 2.2, IAS = 25A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Rev B 050-8088
04-2009
APT34M120J
160
V
GS
50
= 10V T = 125C
J
140 40 ID, DRAIN CURRENT (A) 120
TJ = -55C
V
GS
= 6, 7, 8 & 9V
100 80
TJ = 25C
ID, DRIAN CURRENT (A)
30
5V
60 40 20 0
TJ = 125C TJ = 150C
20
10
4.5V
0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
0
0
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0
NORMALIZED TO VGS = 10V @ 25A
160
VDS> ID(ON) x RDS(ON) MAX.
2.5 ID, DRAIN CURRENT (A)
140 120 100
250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.0
TJ = -55C
1.5
80 60 40 20 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
TJ = 25C TJ = 125C
1.0
0.5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 70 60
TJ = -55C TJ = 25C TJ = 125C
30,000 10,000 C, CAPACITANCE (pF) Ciss
gfs, TRANSCONDUCTANCE
50 40 30 20 10 0
1000 Coss 100 Crss
0
10 15 20 25 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current
ID = 25A
5
30
10
200 400 600 800 1000 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage
0
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10
200 ISD, REVERSE DRAIN CURRENT (A) 180 160 140 120 100 80 60 40 20 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 0
TJ = 150C TJ = 25C
VDS = 240V
8
VDS = 600V
4 2
VDS = 960V
050-8088
100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage
0
0
Rev B
04-2009
6
APT34M120J
250 100 ID, DRAIN CURRENT (A)
IDM
250 100 ID, DRAIN CURRENT (A)
IDM
10
13s 100s 1ms
10
13s 100s 1ms Rds(on) TJ = 150C TC = 25C 10ms 100ms DC line
1
Rds(on)
10ms 100ms
1
0.1
TJ = 125C TC = 75C
DC line
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
1
10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
C
10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area
1
0.14 0.12 0.10 0.08 0.5 0.06 0.04 0.02 0 0.3
Note:
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
0.7
PDM
t1 t2
t1 = Pulse Duration
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
04-2009
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
Rev B
* Source Dimensions in Millimeters and (Inches)
Gate
050-8088
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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